Agnitron's advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry. Note: Si doping is typically used to get heavily doped n-type materials and Mg doping for p-type GaN material. Imperium-MOCVD is a windows based software package developed for extending the life of proven legacy MOCVD systems and offers the latest in advanced process and equipment control technology.
Agnitron Technology Inc Receives 2020 Best of Eden Prairie Award
Phase I Small Business Innovation Research contract (SBIR) to develop an Ultra-Fast Metastable Ion Implant Activation System
Phase II SBIR award to develop and build a III-N MOCVD system
Agnitron Expands Equipment Ability Beyond Other Manufacturers https://t.co/VmmPhHYVE0
Poster Presentation At CS MANTEC Minnesota On The Scalability Of β-Ga2O3 And Related Alloys Grown By MOCVD https://t.co/U3MLKjhm38
ONR Selects Agnitron for Next Generation III-N MOCVD Project: https://t.co/9jDybhLF1p
Agnitron Develops Key MOCVD Capability For 10kV+ β-Ga2O3 Switches https://t.co/AdtUmLV225
Agnitron β-Ga2O3 Growth Work Featured In June Issue of Compound Semiconductor Magazine: https://t.co/YmlHNebbxf
Five Agilis β-Ga2O3 MOCVD Systems In Production by Agnitron To Fulfill New Orders: https://t.co/nFJRCdYaoH @compoundsemi @Semiconductor_T
ONR Extends Agnitron’s β-Ga2O3 MOCVD Growth Program Into Phase II: https://t.co/3QNIlG1b8m @compoundsemi @Semiconductor_T
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